Vol. 19

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2011-01-23

Development of a Wideband Highly Efficient GaN Vmcd VHF/UHF Power Amplifier

By Song Lin and Aly Fathy
Progress In Electromagnetics Research C, Vol. 19, 135-147, 2011
doi:10.2528/PIERC10112306

Abstract

A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 43 dBm output power and 63% drain efficiency has been successfully developed. The demonstrated wideband power amplifier utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifier's output power and efficiency. To assure a wideband operation, a coaxial line impedance transformer has been used as part of the input matching network; meanwhile, a wideband a 1:1 ferrite loaded balun and low pass filters are utilized on the amplifier's output side instead of the conventional serial harmonic termination.

Citation


Song Lin and Aly Fathy, "Development of a Wideband Highly Efficient GaN Vmcd VHF/UHF Power Amplifier," Progress In Electromagnetics Research C, Vol. 19, 135-147, 2011.
doi:10.2528/PIERC10112306
http://www.jpier.org/PIERC/pier.php?paper=10112306

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