volume | PIER Journals

Abstract

In this study, a novel, low-profile, polarization-insensitive, and compact band-notched absorber is presented. The objective of the proposed work is to design a miniaturized FSS-based band-notch absorber with high angular stability exhibiting strong operational bandwidth of 130.5% (1.7 GHz to 8.09 GHz). The absorber consists of a reflecting band sandwiched between two absorption bands. The absorption bands lie in between 1.7 GHz to 3.75 GHz and 5.65 GHz to 8.09 GHz respectively. The strong reflection band with 1 dB insertion loss lies in the frequency range from 4.25 GHz to 5.12 GHz. The proposed absorber structure comprises multiple layers with a metal sheet at the bottom. Total thickness of the band notch absorber is only 0.064λ_L (where λ_L is the wavelength corresponding to the lowest frequency of operation). The top layer comprises a modified swastika frame metallic structure loaded with lumped resistors placed on a dielectric substrate. Two air layers, one below the top layer and the other above the bottom metal, are inserted. In between two air layers a dielectric layer with a metallic rectangular ring pattern is positioned. The four-fold symmetrical structure results in polarization insensitive response. The equivalent circuit of the proposed structure is developed for understanding the underlying working principle of band notch absorbers. The surface current distribution has also been studied. The designed absorber is fabricated, and measurements are done in an anechoic chamber. The measured results show good agreement with the simulated ones.

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Dr. Saurabh Sambhav

Dr. Jayanta Ghosh