Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules
China
HomepageSchool of Information Science and Engineering
Southeast University
P. R. China
Homepage1. Fujishima, Minoru, Mizuki Motoyoshi, Kosuke Katayama, Kyoya Takano, Naoko Ono, and Ryuichi Fujimoto, "98 mW 10 Gbps wireless transceiver chipset with D-band CMOS circuits," IEEE Journal of Solid-state Circuits, Vol. 48, No. 10, 2273-2284, 2013.
2. Cho, Hanjin and Dorothea E. Burk, "A three-step method for the de-embedding of high-frequency S-parameter measurements," IEEE Transactions on Electron Devices, Vol. 38, No. 6, 1371-1375, 1991.
3. Koolen, M. C. A. M., J. A. M. Geelen, and M. P. J. G. Versleijen, "An improved de-embedding technique for on-wafer high-frequency characterization," Proc. Bipolar Circuits Technol. Meeting, 188-191, 1991.
4. Vandamme, Ewout P., D. M. M.-P. Schreurs, and G. Van Dinther, "Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures," IEEE Transactions on Electron Devices, Vol. 48, No. 4, 737-742, 2001.
5. Lobisser, Evan, Scaling Mesa Indium Phosphide DHBTs to Record Bandwidths, University of California, Santa Barbara, 2011.
6. Lautzenhiser, Stephen, Andrew Davidson, and Keith Jones, "Improve accuracy of on-wafer tests via LRM calibration," Microwaves & RF, Vol. 29, No. 1, 105-109, 1990.
7. Rumiantsev, Andrej, Susan L. Sweeney, and Phillip L. Corson, "Comparison of on-wafer multiline TRL and LRM+ calibrations for RF CMOS applications," 2008 72nd ARFTG Microwave Measurement Symposium, 132-136, IEEE, 2008.
8. DeGroot, Donald C., Jeffrey A. Jargon, and Roger B. Marks, "Multiline TRL revealed," 60th ARFTG Conference Digest, Fall 2002., 131-155, IEEE, 2002.
9. Fregonese, Sebastien, Marina Deng, Magali De Matos, Chandan Yadav, Simon Joly, Bernard Plano, Christian Raya, Bertrand Ardouin, and Thomas Zimmer, "Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz," IEEE Transactions on Terahertz Science and Technology, Vol. 9, No. 1, 89-97, 2019.
10. Fregonese, Sebastien, Magali De Matos, Marina Deng, Manuel Potereau, Cédric Ayela, Klaus Aufinger, and Thomas Zimmer, "On-wafer characterization of silicon transistors up to 500 GHz and analysis of measurement discontinuities between the frequency bands," IEEE Transactions on Microwave Theory and Techniques, Vol. 66, No. 7, 3332-3341, 2018.
doi:10.1109/TMTT.2018.2832067
11. Cleriti, R., W. Ciccognani, S. Colangeli, E. Limiti, P. Frijlink, and M. Renvoise, "Characterization and modelling of 40 nm mHEMT process up to 110 GHz," 2016 11th European Microwave Integrated Circuits Conference (EuMIC), 353-356, IEEE, 2016.
12. Lopez-Gonzalez, F. J., E. Marquez-Segura, P. Otero, and C. Camacho-Penalosa, "Robust statistical multi-line TRL calibration approach for microwave device characterization," MELECON 2006 --- 2006 IEEE Mediterranean Electrotechnical Conference, 187-190, IEEE, 2006.
13. Marks, Roger B., "A multiline method of network analyzer calibration," IEEE Transactions on Microwave Theory and Techniques, Vol. 39, No. 7, 1205-1215, 1991.
14. Yadav, Chandan, Marina Deng, Sebastien Fregonese, Marco Cabbia, Magali De Matos, and Thomas Zimmer, "Investigation of variation in on-Si on-wafer TRL calibration in sub-THz," IEEE Transactions on Semiconductor Manufacturing, Vol. 34, No. 2, 145-152, 2021.
15. Cabbia, Marco, Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali De Matos, and Thomas Zimmer, "Silicon test structures design for sub-THz and THz measurements," IEEE Transactions on Electron Devices, Vol. 67, No. 12, 5639-5645, 2020.
16. Galatro, Luca, Andreas Pawlak, Michael Schroter, and Marco Spirito, "Capacitively loaded inverted CPWs for distributed TRL-based de-embedding at (sub) mm-waves," IEEE Transactions on Microwave Theory and Techniques, Vol. 65, No. 12, 4914-4924, 2017.
17. Lu, Haiyan, Wei Cheng, Oupeng Li, Yuechan Kong, and Tangsheng Chen, "Measurement and modeling techniques for InP-based HBT devices to 220GHz," 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 1-3, IEEE, 2018.
18. DeGroot, Donald C., Jeffrey A. Jargon, and Roger B. Marks, "Multiline TRL revealed," 60th ARFTG Conference Digest, Fall 2002., 131-155, IEEE, 2002.
19. Lobisser, Evan, Scaling Mesa Indium Phosphide Dhbts to Record Bandwidths, University of California, Santa Barbara, 2011.
20. Deal, W. R., Kevin Leong, Alex Zamora, Wayne Yoshida, Mike Lange, Ben Gorospe, Khanh Nguyen, and Gerry X. B. Mei, "A low-power 670-GHz InP HEMT receiver," IEEE Transactions on Terahertz Science and Technology, Vol. 6, No. 6, 862-864, 2016.
21. Leong, Chee Cheong Joseph, Zhongxiang Shen, and Lai Choon Tay, "Small-signal modeling of a PHEMT up to 110 GHz based on the genetic algorithm," Microwave and Optical Technology Letters, Vol. 29, No. 6, 367-373, 2001.
22. Niu, Bin, Yuan Wang, Wei Cheng, Zi-Li Xie, Hai-Yan Lu, Yan Sun, Jun-Ling Xie, and Tang-Sheng Chen, "Fabrication and small signal modeling of 0.5 μm InGaAs/InP DHBT demonstrating FT/Fmax of 350/532 GHz," Microwave and Optical Technology Letters, Vol. 57, No. 12, 2774-2778, 2015.
23. Yau, Kenneth, Eric Dacquay, Ioannis Sarkas, and Sorin P. Voinigescu, "Device and IC characterization above 100 GHz," IEEE Microwave Magazine, Vol. 13, No. 1, 30-54, 2012.
24. Williams, Dylan F., Phillip Corson, Jahnavi Sharma, Harish Krishnaswamy, Wei Tai, Zacharias George, David S. Ricketts, Paul M. Watson, Eric Dacquay, and Sorin P. Voinigescu, "Calibrations for millimeter-wave silicon transistor characterization," IEEE Transactions on Microwave Theory and Techniques, Vol. 62, No. 3, 658-668, 2014.