volume | PIER Journals

Abstract

We apply the third-order susceptibility tensor generated by the Simplified Bond Hyperpolarizability Model (SBHM) to address the long standing challenges in distinguishing the bulk and surface quadrupolar second-harmonic-generation (SHG) contributions in diamond lattices, such as silicon, which exhibit bulk inversion symmetry. Assuming that the quadrupolar contribution originates from the interface gradient of the excited electric field, we demonstrate through symmetry considerations and numerical calculations for Si(001) and Si(111) facet orientations that it is not possible to separate the different quadrupolar contributions when the incoming light is incident normally. However, we show that such separation is achievable with oblique incidence. Furthermore, we propose a novel experimental design to measure the bulk and surface quadrupolar SHG contributions separately by introducing a semi-vicinal surface. Using numerical SBHM simulations, we show for the first time that this semi-vicinal setup can prove the existence of spatial dispersion, a nonlinear dipolar bulk effect recently proposed. This approach may lead to a better understanding of various nonlinear contributions in silicon and enable precise nonlinear surface monitoring.

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Dr. Damián Zúiga-Avelar

Dr. Omar Palillero-Sandoval

Dr. Rosibel Carrada-Legaria

Dr. Muhammad Ahyad

Dr. Hendradi Hardhienata

Dr. Adalberto Alejo-Molina