2018-07-24
Waveguide Designing for Absorbing Modulator in GaN /AlN Structure for All Optical Networking
By
Progress In Electromagnetics Research M, Vol. 71, 51-61, 2018
Abstract
In this paper a waveguide is introduced as an absorbing modulator using GaN/AlN structure based on spherical quantum dots. The role of waveguide (modulator) dimensions on optical profile of light in the channel and coupling efficiency is also investigated. These parameters can affect the main characteristics of modulator like absorption and depth of modulation. First we will give a brief explanation about the all optical modulator structure based on spherical quantum dots and its optical properties. Then the electrical fields in optical fiber and modulator will be introduced, and the effects of dimensions on these fields will be discussed. The results show that the electric field distribution determines the insertion loss and also effects on modulation. Finally we will determine the proper dimensions of modulator for coupling to optical fiber.
Citation
Ali Rahmani, and Ali Rostami, "Waveguide Designing for Absorbing Modulator in GaN /AlN Structure for All Optical Networking," Progress In Electromagnetics Research M, Vol. 71, 51-61, 2018.
doi:10.2528/PIERM18050705
References

1. Nevou, L., F. H. Julien, R. Colombelli, F. Guillot, and E. Monroy, "Room-temperature intersubband emission of GaN/AlN quantum wells at λ = 2.3 μm," Electron. Lett., Vol. 42, 1308-1309, 2006.
doi:10.1049/el:20062282        Google Scholar

2. Hamazaki, J., S. Matsui, H. Kunugita, K. Ema, H. Kanazawa, T. Tachibana, A. Kikuchi, and K. Kishino, "Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells," Appl. Phys. Lett., Vol. 84, 1102-1104, 2004.
doi:10.1063/1.1647275        Google Scholar

3. Friel, I., K. Driscoll, E. Kulenica, M. Dutta, R. Paiella, and T. D. Moustakas, "Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption," J. Cryst. Growth, Vol. 278, 387-392, 2005.
doi:10.1016/j.jcrysgro.2005.01.042        Google Scholar

4. Nevou, L., M. Tchernycheva, L. Doyennette, F. H. Julien, E. Warde, R. Colombelli, F. Guillot, S. Leconte, E. Monroy, T. Remmele, and M. Albrecht, "New developments for nitride unipolar devices at 1.3-1.5 μm wavelengths," Superlattices Microstruct., Vol. 40, 412-417, 2006.
doi:10.1016/j.spmi.2006.09.016        Google Scholar

5. Gopal, A. V., H. Yoshida, A. Neogi, N. Georgiev, T. Mozume, T. Simoyama, O. Wada, H. Yoshida, A. Neogi, N. Georgiev, T. Mozume, T. Simoyama, O. Wada, and H. Ishikawa, "Intersubband absorption saturation in InGaAs-AlAsSb quantum wells," IEEE J. Quantum Electron., Vol. 38, 1515-1520, 2002.
doi:10.1109/JQE.2002.804293        Google Scholar

6. Akimoto, R., B. S. Li, K. Akita, and T. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides at telecommunication wavelength," Appl. Phys. Lett., Vol. 87, 181104, 2005.
doi:10.1063/1.2123379        Google Scholar

7. Sun, H. H., F. Y. Guo, D. Y. Li, L. Wang, D. B. Wang, and L. C. Shao, "Intersubband absorption properties of high Al content AlxGa11−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition," Nanoscale Research Letters, Vol. 7, 1-6, 2012.
doi:10.1186/1556-276X-7-1        Google Scholar

8. Neogi, A., H. Yoshida, T. Mozume, N. Georgiev, and O. Wada, "Intersubband transition and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum-well structures," IEEE J. Sel. Top. Quantum Electron., Vol. 7, 7, 2001.
doi:10.1109/2944.974243        Google Scholar

9. Chen, G., X. Q. Wang, X. Rong, P. Wang, F. J. Xu, N. Tang, Z. X. Qin, Y. H. Chen, and B. Shen, "“Intersubband transition in GaN/InGaN multiple quantum wells," Sci. Rep., Vol. 5, 11485, 2015.
doi:10.1038/srep11485        Google Scholar

10. Fu, H., Z. Lu, X. Huang, H. Chen, and Y. Zhao, "Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single," App. Phys., Vol. 119, 174502, 2016.
doi:10.1063/1.4948667        Google Scholar

11. Rostami, A., H. Baghban, and H. Rasooli Saghai, "An ultra-high level second-order nonlinear optical susceptibility in strained asymmetric GaN-AlGaN-AlN quantum wells: Towards all-optical devices and systems," Microelectronics J., Vol. 38, 900, 2007.
doi:10.1016/j.mejo.2007.07.071        Google Scholar

12. Rahmani, A. and A. Rostami, "Ultrafast GaN/AlN modulator based on quantum dot for terabit all-optical communication," Optik, Vol. 125, 3844, 2014.
doi:10.1016/j.ijleo.2014.01.175        Google Scholar

13. Kim, J., M. Laemmlin, C. Meuer, D. Bimberg, and G. Eisenstein, "Theoretical and experimental study of high-speed small-signal cross-gain modulation of quantum-dot semiconductor optical amplifiers," IEEE J. of Quantum Electronics, Vol. 45, 3, 2009.
doi:10.1109/JQE.2008.2010881        Google Scholar

14. Nishihara, H., M. Haruna, and T. Suhara, Optical Integrated Circuits, 29, 89, McGraw-Hill, USA, 1985.

15. Kawano, K. and T. Kitoh, Introduction to Optical Waveguide Analysis, John Wiley & Sons, Newyork, 37, 2001.