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PIER PIER B PIER C PIER M PIER Letters PIER Photonics
2019-01-24
An Asymmetric-Width Broad-Side Coupled Transformer to Reduce the Parasitic Coupling Capacitance for CMOS Power Amplifier Applications
By
Jonghoon Park,

    Mr. Jonghoon Park

    College of Information Technology

    Soongsil University

    Republic of Korea

    Homepage

Changhyun Lee,

    Dr. Changhyun Lee

    College of Information Technology

    Soongsil University

    Republic of Korea

    Homepage

Changkun Park

    Dr. Changkun Park

    School of Electronic Engineering

    Soongsil University

    South Korea

    Homepage

Progress In Electromagnetics Research M, Vol. 78, 93-101, 2019
doi:10.2528/PIERM18112501 | Google Scholar

Abstract
In this study, we propose a broad-side coupled transformer with reduced capacitance for RF CMOS power amplifier applications. The width of the secondary winding is decreased to reduce parasitic coupling capacitance. Additionally, an auxiliary primary winding is added to improve the coupling between the primary and secondary windings. To prove feasibility of the proposed transformer, we design the transformer using 180-nm RF CMOS technology. From the simulated results of a typical transformer and the proposed broad-side coupled transformer, we successfully find that the parasitic coupling capacitance of the proposed structure is reduced compared to that of a typical structure. Additionally, the auxiliary primary winding increases the maximum available gain of the proposed transformer.
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Citation
Jonghoon Park, Changhyun Lee, and Changkun Park, "An Asymmetric-Width Broad-Side Coupled Transformer to Reduce the Parasitic Coupling Capacitance for CMOS Power Amplifier Applications," Progress In Electromagnetics Research M, Vol. 78, 93-101, 2019.
doi:10.2528/PIERM18112501
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