volume | PIER Journals

Abstract

The low-noise amplifier(LNA) is the most vulnerable device in the front-door coupling path of the wireless communication link. When the electromagnetic pulse(EMP) is injected into the LNA circuit, it first generates the electromagnetic response with peripheral components, and then is transmitted further. This affects the pulse value transmitted to the internal semiconductor device and its degree of damage. The pseudomorphic high electron mobility transistor(pHEMT) type transistors are widely used in modern RF circuits because of their good stability and wide frequency characteristics. However, the frequency-selective characteristics of the front-end system exacerbate the electromagnetic coupling damage of the LNA circuit in some frequency bands. Therefore, in this paper, the vulnerable frequency points of the pHEMT LNA circuit under repetitive pulses are analyzed by injection experiment. It is found that both in-band and out-of-band lead to permanent damage to the LNA. For the more vulnerable 3 GHz frequency point, the electromagnetic response under injection withstand and absorption conditions was measured, determining that the gate external resistance offset follows a power-law relationship with the input power. Furthermore, the energy threshold was obtained, which assesses the energy that, after electromagnetic loss by an external 100 Ω resistor, is transmitted to the gate input and causes permanent damage to the LNA transistor. The breakdown damage mechanism of the gate-source of the LNA transistor is verified by failure analysis.

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Ms. Shaqi Tian

Professor Fan Wu

Dr. Ruiqi Su

Dr. Ying Li

Dr. Yuan'an Liu