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PIER PIER B PIER C PIER M PIER Letters PIER Photonics
2009-11-06
A 900-MHz 30-dBm Bulk CMOS Transmit/Receive Switch Using Stacking Architecture, High Substrate Isolation, and RF Floated Body
By
Yih-Hsia Lin,

    Dr. Yih-Hsia Lin

    Ming Chuan University

    Taiwan

    Homepage

Chun-Hsueh Chu,

    Dr. Chun-Hsueh Chu

    Institute of Electronics Engineering

    National Tsing Hua University

    Taiwan, R.O.C.

    Homepage

Da-Chiang Chang,

    Dr. Da-Chiang Chang

    National Chip Implementation Center

    Taiwan, R.O.C.

    Homepage

Jeng Gong,

    Dr. Jeng Gong

    Institute of Electronics Engineering

    National Tsing Hua University

    Taiwan, R.O.C.

    Homepage

Ying-Zong Juang

    Dr. Ying-Zong Juang

    National Chip Implementation Center

    Taiwan, R.O.C.

    Homepage

Progress In Electromagnetics Research C, Vol. 11, 91-107, 2009
doi:10.2528/PIERC09100105 | Google Scholar

Abstract
This paper presents comprehensive methods for the design of a 900-MHz CMOS transmit/receive (T/R) switch with high power-handling capability. Techniques such as RF floated body to extend the bandwidth and decrease the insertion loss, and stacking architecture with high substrate isolation to enhance the power-handling capability are used for the design of a T/R switch on a standard 0.18um triple-well CMOS process. The measured performance of the T/R switch demonstrates the effectiveness of the methods presented in this paper such that insertion loss less than 1.0 dB, isolation up to 35.2 dB, and input 1-dB compression point of 30-dBm can be achieved at 900-MHz.
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Citation
Yih-Hsia Lin, Chun-Hsueh Chu, Da-Chiang Chang, Jeng Gong, and Ying-Zong Juang, "A 900-MHz 30-dBm Bulk CMOS Transmit/Receive Switch Using Stacking Architecture, High Substrate Isolation, and RF Floated Body," Progress In Electromagnetics Research C, Vol. 11, 91-107, 2009.
doi:10.2528/PIERC09100105
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