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2009-11-06
A 900-MHz 30-dBm Bulk CMOS Transmit/Receive Switch Using Stacking Architecture, High Substrate Isolation, and RF Floated Body
By
Progress In Electromagnetics Research C, Vol. 11, 91-107, 2009
Abstract
This paper presents comprehensive methods for the design of a 900-MHz CMOS transmit/receive (T/R) switch with high power-handling capability. Techniques such as RF floated body to extend the bandwidth and decrease the insertion loss, and stacking architecture with high substrate isolation to enhance the power-handling capability are used for the design of a T/R switch on a standard 0.18um triple-well CMOS process. The measured performance of the T/R switch demonstrates the effectiveness of the methods presented in this paper such that insertion loss less than 1.0 dB, isolation up to 35.2 dB, and input 1-dB compression point of 30-dBm can be achieved at 900-MHz.
Citation
Yih-Hsia Lin Chun-Hsueh Chu Da-Chiang Chang Jeng Gong Ying-Zong Juang , "A 900-MHz 30-dBm Bulk CMOS Transmit/Receive Switch Using Stacking Architecture, High Substrate Isolation, and RF Floated Body," Progress In Electromagnetics Research C, Vol. 11, 91-107, 2009.
doi:10.2528/PIERC09100105
http://www.jpier.org/PIERC/pier.php?paper=09100105
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