Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules
China
Homepage
Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules
China
Homepage
Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules
China
Homepage1. Goasguen, S., M. M. Tomeh, and S. M. El-Ghazaly, "Full wave analysis of FET fingers using various semiconductor physical models," 2001 IEEE MTT-S International Microwave Symposium Digest, Vol. 1, 415, 2001.
doi:10.1109/MWSYM.2001.966919 Google Scholar
2. Robin, F., O. J. Homan, and W. Bachtold, "2D simulations of InGaAs/InAlAs/InP HEMTs with asymmetrical gate recess," 2000 International Conference on Indium Phosphide and Related Materials, 98, 2000.
doi:10.1109/ICIPRM.2000.850241 Google Scholar
3. Imtiaz, S. M. S. and S. M. El-Ghazaly, "Performance of MODFET and MESFET, a comparative study including equivalent circuits using combined electromagnetic and solid-state simulator," IEEE Transactions on Microwave Theory and Techniques, Vol. 46, No. 7, 923, 1998.
doi:10.1109/22.701444 Google Scholar
4. Cidronali, A., G. Leuzzi, G. Manes, et al. "Physical/electromagnetic pHEMT modeling," IEEE Transactions on Microwave Theory and Techniques, Vol. 51, No. 3, 830, 2003.
doi:10.1109/TMTT.2003.808580 Google Scholar
5. Imtiaz, S. M. and S. M. El-Ghazaly, "Global modeling of millimeter-wave circuits: Electromagnetic simulation of amplifiers," IEEE Transactions on Microwave Theory and Techniques, Vol. 45, No. 12-2208, 1997.
doi:10.1109/22.643818 Google Scholar
6. Laloue, A., J. B. David, R. Quere, et al. "Extrapolation of a measurement-based millimeter-wave nonlinear model of pHEMT to arbitrary-shaped transistors through electromagnetic simulations," IEEE Transactions on Microwave Theory and Techniques, Vol. 47, No. 6, 908, 1999.
doi:10.1109/22.769325 Google Scholar
7. Tsai, R., M. Nishimoto, W. Akiyama, et al. "2nd generation device modeling for MMIC design & manufacturability," 2002 GaAs MANTECH Conference, 2002. Google Scholar
8. Hoque, M. E., M. Heimlich, J. Tarazi, et al. "Scalable HEMT model for small signal operations," 2010 International Conference on Electromagnetics in Advanced Applications, 309, 2010.
doi:10.1109/ICEAA.2010.5651288 Google Scholar
9. Schwitter, B., S. A. Albahrani, A. Parker, et al. "Study of self-heating in GaAs pHEMTs using pulsed I-V analysis," 81st Microwave Measurement Conference, 1-6, 2013. Google Scholar
10. Ladbrooke, P. H. and S. R. Blight, "Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomalies," IEEE Transactions on Electron Devices, Vol. 35, No. 3, 257, 1988.
doi:10.1109/16.2449 Google Scholar
11. Camacho, P. C. and C. S. Aitchison, "Modelling frequency dependence of output impedance of a microwave MESFET at low frequencies," Electronics Letters, Vol. 21, No. 12, 528, 1985.
doi:10.1049/el:19850373 Google Scholar
12. Brazil, T. J., "A universal large-signal equivalent circuit model for the GaAs MESFET," 21st European Microwave Conference, Vol. 2, 921, 1991. Google Scholar
13. Rizzoli, V., A. Costanzo, and G. Muzzarelli, "A universal electrothermal FET model suitable for general large-signal applications," Proc. 26th EuMC, Vol. 251, 1996. Google Scholar
14. Cojocaru, V. I. and T. J. Brazil, "A scalable general-purpose model for microwave FETs including DC/AC dispersion effects," IEEE Transactions on Microwave Theory and Techniques, Vol. 45, No. 12, 2248, 1997.
doi:10.1109/22.643826 Google Scholar
15. Cidronali, A., G. Collodi, A. Santarelli, et al. "Small-signal distributed FET modeling through electromagnetic analysis of the extrinsic structure," 1998 IEEE MTT-S International Microwave Symposium Digest, Vol. 1, 287, 1998.
doi:10.1109/MWSYM.1998.689376 Google Scholar
16. Kuwabara, T., Y. Kosaka, T. Eda, et al. "Accurate analysis of millimeter-wave MMIC power amplifier using distributed FET model," 1999 IEEE MTT-S International Microwave Symposium Digest, Vol. 1, 161, 1999.
doi:10.1109/MWSYM.1999.779448 Google Scholar
