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PIER PIER B PIER C PIER M PIER Letters PIER Photonics
2011-11-15
Device Simulation of Effects of Microwave Electromagnetic Interference on CMOS Rs Flip-Flops
By
Jie Chen,

    Dr. Jie Chen

    Department of Electronic Engineering

    Tsinghua University

    China

    Homepage

Zhengwei Du

    Dr. Zhengwei Du

    Department of Electronic Engineering

    Tsinghua University

    China

    Homepage

Progress In Electromagnetics Research M, Vol. 22, 27-39, 2012
doi:10.2528/PIERM11090806 | Google Scholar

Abstract
The study on effects of microwave electromagnetic interference on CMOS RS flip-flops is reported in this paper. Using device simulation method, the relation between the susceptibility of CMOS RS flip-flops and microwave electromagnetic interference frequency as well as pulse width has been analyzed. It is found that the effects of microwave electromagnetic interference get suppressed gradually with increasing frequency. Furthermore, the interference power threshold is inversely proportional to the pulse width, and the interference energy threshold is directly proportional to the pulse width conversely. In addition, because of the difference in the structure of these two categories of CMOS RS flip-flops, they have different susceptibility to microwave electromagnetic interference.
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Citation
Jie Chen, and Zhengwei Du, "Device Simulation of Effects of Microwave Electromagnetic Interference on CMOS Rs Flip-Flops," Progress In Electromagnetics Research M, Vol. 22, 27-39, 2012.
doi:10.2528/PIERM11090806
References

1. Backstrom, M. G. and K. G. Lovstrand, "Susceptibility of electronic systems to high-power microwaves: Summary of test experience," IEEE Trans. Electromag. Compat., Vol. 46, No. 3, 396-404, 2004.
doi:10.1109/TEMC.2004.831814        Google Scholar

2. Nitsch, D., M. Camp, F. Sabath, et al. "Susceptibility of some electronic equipment to HPEM threats," IEEE Trans. Electromag. Compat., Vol. 46, No. 3, 380-390, 2004.
doi:10.1109/TEMC.2004.831842        Google Scholar

3. Hoad, R., N. J. Carter, D. Herke, et al., "Trends in EM susceptibility of IT equipment," IEEE Trans. Electromag. Compat., Vol. 46, No. 3, 390-396, 2004.
doi:10.1109/TEMC.2004.831815        Google Scholar

4. Kim, K. and A. A. Iliadis, "Critical upsets of CMOS inverters in static operation due to high-power microwave interference," IEEE Trans. Electromag. Compat., Vol. 49, No. 4, 876-885, 2007.
doi:10.1109/TEMC.2007.908820        Google Scholar

5. Kim, K. and A. A. Iliadis, "Impact of microwave interference on dynamic operation and power dissipation of CMOS inverters," IEEE Trans. Electromag. Compat., Vol. 49, No. 2, 329-338, 2007.
doi:10.1109/TEMC.2007.893333        Google Scholar

6. Wang, H., J. Li, H. Li, K. Xiao, and H. Chen, "Experimental study and spice simulation of CMOS inverters latch-up effects due to high power microwave interference," Progress In Electromagnetics Research, Vol. 87, 313-330, 2008.
doi:10.2528/PIER08100408        Google Scholar

7. Hong, J. I., S. M. Hwang, and C. S. Huh, "Susceptibility of CMOS IC devices under narrow-band high power electromagnetic waves by magnetron," Journal of Electromagnetic Waves and Applications, Vol. 23, No. 5-6, 571-582, 2009.
doi:10.1163/156939309788019813        Google Scholar

8. Wallace, R. E., S. G. Zaky, and K. G. Balmain, "Fast-transient susceptibility of a D-type flip-flop," IEEE Trans. Electromag. Compat., Vol. 37, No. 1, 75-80, 1995.
doi:10.1109/15.350243        Google Scholar

9. Kashyap, S., C. L. Gardner, and J. A. Walsh, "Upset of a flip-flop based counting circuit by EM transients," IEEE International Symposium on Electromagnetic Compatibility, Vol. 1, 233-238, 2001.        Google Scholar

10. Chahine, I., M. Kadi, E. Gaboriaud, A. Louis, and B. Mazari, "Characterization and modeling of the susceptibility of integrated circuits to conducted electromagnetic disturbances up to 1 GHz," IEEE Trans. Electromag. Compat., Vol. 50, No. 2, 285-293, May 2008.
doi:10.1109/TEMC.2008.918983        Google Scholar

11. Chahine, I., M. Kadi, E. Gaboriaud, X. Gallenne, A. Louis, and B. Mazari, "Enhancement of accuracy for measuring the susceptibility of integrated circuits to conducted electromagnetic disturbances," IET Sci. Meas. Technol., Vol. 1, No. 5, 240-244, Sep. 2007.
doi:10.1049/iet-smt:20060142        Google Scholar

12. Chahine, I., M. Kadi, E. Gaboriaud, C. Maziere, A. Louis, and B. Mazari, "Modeling of integrated circuits susceptibility to conducted continuous wave interference using neural networks," IET Electron. Lett., Vol. 42, No. 18, 1022-1024, Aug. 2006.
doi:10.1049/el:20061903        Google Scholar

13. Alaeldine, R. P., M. Ramdani, J.-L. Levant, and M. Drissi, "A direct power injection model for immunity prediction in integrated circuits," IEEE Trans. Electromag. Compat., Vol. 50, No. 1, 52-62, Feb. 2008.
doi:10.1109/TEMC.2007.911920        Google Scholar

14. Xi, C. and Z. Du, "Effect of pulse repetition frequency on the semiconductor devices burnout caused by microwave pulses," International Review of Electrical Engineering --- IREE, Vol. 5, No. 5, 2500-2507, 2010.        Google Scholar

15. MEDICI (TM), Version A-2008.09-0, , Synopsys, Inc.        Google Scholar

16. Kim, K. and A. A. Iliadis, "Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference," Solid-State Electronics, Vol. 52, No. 10, 1589-1593, 2008.
doi:10.1016/j.sse.2008.06.041        Google Scholar

17. Fang, J., G. Liu, P. Li, et al. "Experimental study of the high power microwave pulse width effect," High Power Laser and Particle Beams, Vol. 19, No. 7, 1197-1202, 2007.        Google Scholar

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