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PIER PIER B PIER C PIER M PIER Letters PIER Photonics
2019-11-25
Compact, Broadband and Reliable Lateral MEMS Switching Networks for 5G Communications
By
Sukomal Dey,

    Dr. Sukomal Dey

    Department of Electrical Engineering

    Indian Institute of Technology Palakkad

    India

    Homepage

Shiban Kishen Koul,

    Dr. Shiban Kishen Koul

    Indian Institute of Technology Delhi

    India

    Homepage

Ajay K. Poddar,

    Dr. Ajay K. Poddar

    Synergy Microwave Corp

    USA

    Homepage

Ulrich L. Rohde

    Dr. Ulrich L. Rohde

    Synergy Microwave Corp

    USA

    Homepage

Progress In Electromagnetics Research M, Vol. 86, 163-171, 2019
doi:10.2528/PIERM19091703 | Google Scholar

Abstract
The design, development and characterization of broadband (1-30 GHz) microelectromechanical systems (MEMS) based electrostatically driven lateral switching networks are presented in this paper. Initially, single switch performances are optimized, and later it is used to develop different switching networks like single-pole-double-throw (SPDT), single-pole-three-throw (SP3T), and single-pole-six-throw (SP6T). All switches are extensively characterized including reliability testing. Switching networks demonstrate measured return loss of better than 21 dB (11.4 dB) with worst case insertion loss of 0.67 dB (~5 dB) and isolation of better than 31 dB (17.7 dB) at 3.5 GHz (28 GHz) for 5G communications. Switching networks tested for > 1 billion cycles with 1 W of RF power are found to be operational. Maximum fabricated switch (SP6T) area is ~0.7 mm2 including bias lines and pads.
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Citation
Sukomal Dey, Shiban Kishen Koul, Ajay K. Poddar, and Ulrich L. Rohde, "Compact, Broadband and Reliable Lateral MEMS Switching Networks for 5G Communications," Progress In Electromagnetics Research M, Vol. 86, 163-171, 2019.
doi:10.2528/PIERM19091703
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