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2010-02-09
Engineering Approach to Modelling Frequency Dispersion Within Normal Metals at Room Temperature for THz Applications
By
Progress In Electromagnetics Research, Vol. 101, 257-275, 2010
Abstract
When compared to the over-simplified classical skin-effect model, the accurate classical relaxation-effect modelling approach for THz structures at room temperature can be mathematically cumbersome and not insightful. This paper introduces various interrelated engineering concepts as tools for characterizing the intrinsic frequency dispersive nature of normal metals at room temperature. This engineering approach dramatically simplifies otherwise complex analysis and allows for a much deeper insight to be gained into the classical relaxation-effect model. For example, it explains simply how wavelength increases with frequency at higher terahertz frequencies. This is the first time that such an approach has been applied for the modelling of intrinsic frequency dispersion within a metal. While the focus has been on the characterization of normal metals (magnetic and non-magnetic) at room temperature, it is believed that the same methodology may be applied to metals operating in anomalous frequency-temperature regions, semiconductors, semiconductors, carbon nanotubes and metamaterials.
Citation
Stepan Lucyszyn Yun Zhou , "Engineering Approach to Modelling Frequency Dispersion Within Normal Metals at Room Temperature for THz Applications," Progress In Electromagnetics Research, Vol. 101, 257-275, 2010.
doi:10.2528/PIER09121506
http://www.jpier.org/PIER/pier.php?paper=09121506
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