volume | PIER Journals

Abstract

Strong interests are recently emerging for development of solid-state devices operating in the so-called "terahertz gap" region for possible application in radio astronomy, industry and defense. To fill the THz gap by using conventional electron approach or transit time devices seems to be very difficult due to the limitation that comes from the carrier transit time where extremely small feature sizes are required. One way to overcome this limitation is to employ the traveling wave type approach in semiconductors like classical traveling wave tubes (TWTs) where no transit time limitation is imposed. In this paper, the analysis method to analyze the properties of drifting plasma waves in semiconductor-insulator structure based on the transverse magnetic (TM) mode analysis is presented. Two waves components (quasi-lamellar wave and quasisolenoidal wave), electromagnetic fields (E_y, E_z and H_x) and ω-and k-dependent effective permittivity are derived where these parameters are the main parameters to explain the interaction between propagating electromagnetic waves and drifting carrier plasma waves in semiconductor. A method to determine the surface impedances in semiconductor-insulator multi-layered structure using equivalent transmission line representation method is also presented since multi-layered structure is also a promising structure for fabricating such a so-called plasma wave device.

1. Solymar, L. and E. Ash, "Some travelling-wave interactions in semiconductors theory and design considerations," Int. J. Electronics, Vol. 20, No. 2, 127-148, 1966.
doi:10.1080/00207216608937858 Google Scholar

2. Sumi, M., "Travelling-wave amplification by drifting carriers in semiconductors," Appl. Phys. Lett., Vol. 9, No. 6, 251-253, 1966.
doi:10.1063/1.1754735 Google Scholar

3. Sumi, M., "Traveling-wave amplification by drifting carriers in semiconductors," Jpn. J. Appl. Phys., Vol. 6, No. 6, 688-698, 1967.
doi:10.1143/JJAP.6.688 Google Scholar

4. Zotter, B., Traveling-wave amplification by drifting carriers in Semiconductor, Vol. 2958, 1 US Army ECOM Rept., 1968.

5. Steele, M. C. and B. Vural, Wave Interactions in Solid State Plasmas, Chap. 12, McGraw-Hill, New York, 1969.

6. Ettenberg, M. and J. S. Nadan, "The theory of the interaction of drifting carriers in a semiconductor with external traveling-wave circuits," IEEE Trans. Electron. Devices, Vol. 17, 219-233, 1970.
doi:10.1109/T-ED.1970.16957 Google Scholar

7. Sumi, M. and T. Suzuki, "Evidence for directional coupling between semiconductor carriers and slow circuit waves," Appl. Phys. Lett., Vol. 13, No. 9, 326-327, 1968.
doi:10.1063/1.1652634 Google Scholar

8. Freeman, J. C., V. L. Newhouse, and R. L. Gunshor, "Interactions between slow circuit waves and drifting carriers in InSb and Ge at 4.2 K," Appl. Phys. Lett., Vol. 22, 641-643, 1973.
doi:10.1063/1.1654538 Google Scholar

9. Thompson, J. J., M. R. S. Taylor, A. M. Thompson, S. P. Beaumont, and N. Apsley, "Gallium arsenide solid state travelling wave amplifier at 8 GHz," Electronics Letters, Vol. 27, No. 6, 516-518, 1991.
doi:10.1049/el:19910324 Google Scholar

10. Hashim, A. M., T Hashizume, K. Iizuka, and H. Hasegawa, "Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2deg and interdigital slow waves ," Superlattices Microstruct, Vol. 34, 531-537, 2003.
doi:10.1016/j.spmi.2004.03.054 Google Scholar

11. Mustafa, F. and A. M. Hashim, "Generalized 3D transverse magnetic mode method for analysis of interaction between drifting plasma waves in 2deg-structured semiconductors and electromagnetic space harmonic waves," Progress In Electromagnetics Research, Vol. 102, 315-335, 2010. Google Scholar

12. Iizuka, K., A. M. Hashim, and H. Hasegawa, "Surface plasma wave interactions between semiconductor and electromagnetic space harmonics from microwave to THz range," Thin Solid Films, Vol. 464-465, 464-468, 2003. Google Scholar

13. Hashim, A. M., S. Kasai, T. Hashizume, and H. Hasegawa, "Large modulation of conductance in interdigital-gated HEMT devices due to surface plasma wave interactions," Jpn. J. Appl. Phys., Vol. 44, 2729-2734, 2005.
doi:10.1143/JJAP.44.2729 Google Scholar

14. Hashim, A. M., S. Kasai, T. Hashizume, and H. Hasegawa, "Integration of interdigital-gated plasma wave device for proximity communication system application," Microelectronics Journal, Vol. 38, 1263-1267, 2007. Google Scholar

15. Hashim, A. M., S. Kasai, K. Iizuka, T. Hashizume, and H. Hasegawa, "Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier," Microelectronics Journal, Vol. 38, 1268-1272, 2007. Google Scholar

16. Kino, G. S., "Carrier waves in semiconductors --- Part I: Zero temperature theory," IEEE Trans. Electron. Devices, Vol. 17, 178-192, 1970.
doi:10.1109/T-ED.1970.16952 Google Scholar

17. Blotekjaer, K., "Transport equations for electrons in two-valley semiconductors," IEEE Trans. Electron. Devices, Vol. 17, No. 38, 38-47, 1970.
doi:10.1109/T-ED.1970.16921 Google Scholar

18. Mizushima, Y. and T. Sado, "Surface wave amplification between parallel semiconductors," IEEE Trans. Electron. Devices, Vol. 17, No. 7, 541-549, 1970.
doi:10.1109/T-ED.1970.17027 Google Scholar

19. Steele, M. C. and B. Vural, Wave Interactions in Solid State Plasmas, Chap. 11, McGraw-Hill, New York, 1969.

20. Hashim, A. M., Plasma waves in semiconductors and their interactions with electromagnetic waves up to terahertz region, Ph.D. thesis, Hokkaido University, 2006.

Dr. Farahiyah Mustafa

Professor Abdul Manaf Hashim