volume | PIER Journals

Abstract

A novel nonlinear model for MESFET/HEMT devices is presented. The model can be applied to low power (GaAs) and high power (GaN) devices with equal success. The model provides accurate simulation of the static (DC) and dynamic (Pulsed) I-V characteristics of the device over a wide bias and ambient temperature range (from -70ºC to +70ºC) without the need of an additional electro-thermal sub-circuit. This is an important issue in high power GaN HEMT devices where self-heating and current collapse due to traps is a more serious problem. The parameter extraction strategy of the new model is simple to implement. The robustness of the model when performing harmonic balance simulation makes it suitable for RF and microwave designers. Experimental results presented demonstrate the accuracy of the model when simulating both the small-signal and large-signal behavior of the device over a wide range of frequency, bias and ambient temperature operating points. The model described has been implemented in the Advanced Design System (ADS) simulator to validate the proposed approach without convergence problems.

1. Filicori, F., G. Vannini, A. Santarelli, A. M. Sanchez, A. Tazon, and Y. Newport, "Empirical modeling of low-frequency dispersive e®ects due to traps and thermal phenomena in III-V FET's," IEEE Trans. on Microwave Theory and Tech., Vol. 43, No. 12, 2972-2981, Dec. 1995.
doi:10.1109/22.475663 Google Scholar

2. Rodriguez-Tellez, J., T. Fernandez, A. Mediavilla, and A. Tazon, "Characterization of thermal and frequency-dispersion effects in GaAs MESFET devices," IEEE Trans. on Microwave Theory and Tech., Vol. 49, No. 7, 1352-1355, Jul. 2001.
doi:10.1109/22.932259 Google Scholar

3. Anholt, R. E. and S. E. Swirhun, "Experimental investigation of the temperature dependence of GaAs FET equivalent circuit," IEEE Trans. on Electron Devices, Vol. 39, No. 9, 2029-2036, Sep. 1992.
doi:10.1109/16.155874 Google Scholar

4. Sang, L., Y. Xu, Y. Chen, Y. Guo, and R.-M. Xu, "Large signal equivalent circuit model for package ALGaN/GaN HEMT," Progress In Electromagnetics Research Letters, Vol. 20, 27-36, 2011. Google Scholar

5. Xu, Y., Y. Guo, L. Xia, and Y. Wu, "An support vector regression based nonlinear modeling method for SiC MESFET," Progress In Electromagnetics Research Letter, Vol. 2, 103-114, 2008.
doi:10.2528/PIERL07122102 Google Scholar

6. Elsharkawy, R. R., E. S. El-Rabaie, M. Hindy, R. S. Ghoname, and M. I. Dessouky, "FET small-signal modelling based on the DST and MEL frequency ceptral coefficients," Progress In Electromagnetics Research B, Vol. 18, 185-204, 2009.
doi:10.2528/PIERB09082001 Google Scholar

7. Lardizabal, S. M., A. S. Fernandez, and L. P. Dunleavy, "Temperature-dependent modeling of gallium arsenide MES-FET's," IEEE Trans. on Microwave Theory and Tech., Vol. 44, No. 3, 357-363, Mar. 1996.
doi:10.1109/22.486144 Google Scholar

8. Selmi, L. and B. Ricco, "Modeling temperature effects in the DC I-V characteristics of GaAs MESFET's," IEEE Trans. on Electron Devices, Vol. 40, No. 2, 273-277, Feb. 1993.
doi:10.1109/16.182500 Google Scholar

9. Hasumi, Y., N. Matsunaga, T. Oshima, and H. Kodera, "Characterization of the frequency dispersion of transconductance and drain conductance of GaAs MESFET," IEEE Trans. on Microwave Theory and Tech., Vol. 50, No. 10, 2032-2038, Oct. 2003. Google Scholar

10. Caddemi, A. and N. Donato, "Characterization techniques for temperature-dependent experimental analysis of microwave transistors," IEEE Trans. on Instrumentation and Meas., Vol. 52, No. 1, 85-91, Feb. 2003.
doi:10.1109/TIM.2003.809079 Google Scholar

11. Deng, J., W. Wang, S. Halder, W. R. Curtice, J. C. M. Hwang, V. Adivarahan, and M. A. Khan, "Temperature-dependent RF large-signal model of GaN-based MOSHFETs," IEEE Trans. on Microwave Theory and Tech., Vol. 56, No. 12, 2709-2716, Dec. 2008.
doi:10.1109/TMTT.2008.2007083 Google Scholar

12. Golio, J. M., M. G. Miller, G. N. Maracas, and D. A. Johnson, "Frequency-dependent electrical characteristics of GaAs MES-FET's," IEEE Trans. on Electron Devices, Vol. 37, No. 5, 1217-1227, May 1990.
doi:10.1109/16.108182 Google Scholar

13. Roh, T., Y. Kim, Y. Suh, W. Park, and B. Kim, "A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena," IEEE Trans. on Microwave Theory and Tech., Vol. 45, No. 8, 1252-1255, Aug. 1997.
doi:10.1109/22.618416 Google Scholar

14. Parker, A. E. and J. G. Rathmell, "Bias and frequency dependence of FET characteristics," IEEE Trans. on Microwave Theory and Tech., Vol. 51, No. 2, 588-592, Feb. 2003.
doi:10.1109/TMTT.2002.807819 Google Scholar

15. Tirado, J. M., J. L. Sanchez-Rojas, and J. I. Izpura, "Trapping effects in the transient response of AlGaN/GaN HEMT devices," IEEE Trans. on Electron Devices, Vol. 54, No. 3, 410-417, Mar. 2007.
doi:10.1109/TED.2006.890592 Google Scholar

16. Faqir, M., G. Verzellesi, A. Chini, F. Fantini, F. Danesin, G. Meneghesso, E. Zanoni, and C. Dua, "Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors," IEEE Trans. on Device and Materials Reliability, Vol. 8, No. 2, 240-247, Jun. 2008.
doi:10.1109/TDMR.2008.922017 Google Scholar

17. Binari, S. C., K. Ikossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Trans. on Electron Devices, Vol. 48, No. 3, 465-471, Mar. 2001.
doi:10.1109/16.906437 Google Scholar

18. Joh, J., J. A. del Alamo, and J. Jimenez, "A simple current collapse measurement technique for GaN high-electron mobility transistors," IEEE Electron Device Letters, Vol. 29, No. 7, 665-667, Jul. 2008.
doi:10.1109/LED.2008.2000919 Google Scholar

19. Meneghesso, G., G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U. K. Mishra, C. Canali, and E. Zanoni, "Surface-related drain current dispersion effects in AlGaN-GaN HEMTs," IEEE Trans. on Electron Devices, Vol. 51, No. 10, 1554-1561, Oct. 2004.
doi:10.1109/TED.2004.835025 Google Scholar

20. Angelov, I., L. Bengtsson, and M. Garcia, "Extensions of the chalmers nonlinear HEMT and MESFET model," IEEE Trans. on Microwave Theory and Tech., Vol. 44, No. 10, 1664-1674, Oct. 1996.
doi:10.1109/22.538957 Google Scholar

21. Curtice, W. R., "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans. on Microwave Theory and Tech., Vol. 28, No. 5, 448-456, May 1980.
doi:10.1109/TMTT.1980.1130099 Google Scholar

22. Statz, H., P. Newman, I. W. Smith, R. A. Pucel, and H. A. Haus, "GaAs FET device and circuit simulation in SPICE," IEEE Trans. on Electron Devices, Vol. 34, No. 2, 160-169, Feb. 1987.
doi:10.1109/T-ED.1987.22902 Google Scholar

23. Materka, A. and T. Kacprzak, "Computer calculation of large-signal GaAs FET amplifier characteristics," IEEE Trans. on Microwave Theory and Tech., Vol. 33, No. 2, 129-135, Feb. 1985.
doi:10.1109/TMTT.1985.1132960 Google Scholar

24. Roff , C., J. Benedikt, P. J. Tasker, D. J. Wallis, K. P. Hilton, J. O. Maclean, D. G. Hayes, M. J. Uren, and T. Martin, "Analysis of DC-RF dispersion in AlGaN/GaN HFETs using RF waveform engineering," IEEE Trans. on Electron Devices, Vol. 56, No. 1, 13-18, Jan. 2009.
doi:10.1109/TED.2008.2008674 Google Scholar

25. Zhao, J. H., R. Hwang, and S. Chang, "On the characterization of surface states and deep traps in GaAs MESFETs," Solid-State Electronics, Vol. 36, No. 12, 1665-1672, Dec. 1993.
doi:10.1016/0038-1101(93)90211-8 Google Scholar

26. Tirado, J. M., J. L. Sanchez-Rojas, and J. I. Izpura, "2D simulation of static surface states in AlGaN/GaN HEMT and GaN MESFET devices," Semiconductor Science and Technology, Vol. 20, 864-869, 2005..
doi:10.1088/0268-1242/20/8/042 Google Scholar

27. Braga, N. and R. Mickevicius, "Simulation of gate lag and current collapse in gallium nitride field-effect transistors," Applied Physics Letters, Vol. 85, No. 20, 4780-4782, Nov. 2004.
doi:10.1063/1.1823018 Google Scholar

28. Horio, K. and T. Yamada, "Two-dimensional analysis of surface-state effects on turn-on characteristics in GaAs MESFETs," IEEE Trans. on Electron Devices, Vol. 46, No. 4, 648-655, Apr. 1999.
doi:10.1109/16.753696 Google Scholar

29. Zhang, L., L. F. Lester, A. G. Baca, R. J. Shul, P. C. Chang, C. G. Willison, U. K. Mishra, S. P. Denbaars, and J. C. Zolper, "Epitaxially-grown GaN junction field effect transistors," IEEE Trans. on Electron Devices, Vol. 47, No. 3, 507-511, Mar. 2000.
doi:10.1109/16.824716 Google Scholar

30. Bradley, S. T., A. P. Young, L. J. Brillson, M. J. Murphy, and W. J. Schaff, "Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures," Journal of Electronic Materials, Vol. 30, No. 3, 123-128, Mar. 2001.
doi:10.1007/s11664-001-0004-4 Google Scholar

31. Koley, G., V. Tilak, L. F. Eastman, and M. G. Spencer, "Slow transients observed in AlGaN/GaN HFETs: Effects of SiNx passivation and UV illumination," IEEE Trans. on Electron Devices, Vol. 50, No. 4, 886-893, Apr. 2003.
doi:10.1109/TED.2003.812489 Google Scholar

32. Charache, G. W., S. Akram, E. W. Maby, and I. B. Bhat, "Surface passivation of GaAs MESFET's," IEEE Trans. on Electron Devices, Vol. 44, No. 11, 1837-1842, Nov. 1997.
doi:10.1109/16.641350 Google Scholar

33. Tenedorio, J. G. and P. A. Terzian, "Effects of Si₃N₄, SiO, and polyimide surface passivations on GaAs MESFET amplifier RF stability," IEEE Electron Device Letters, Vol. 5, No. 6, 199-202, Jun. 1984.
doi:10.1109/EDL.1984.25886 Google Scholar

34. Raffo, A., A. Santarelli, P. A. Traverso, G. Vannini, F. Palomba, F. Scappaviva, M. Pagani, and F. Filicori, "Accurate pHEMT nonlinear modeling in the presence of low-frequency dispersive effects," IEEE Trans. on Microwave Theory and Tech., Vol. 53, No. 11, 3449-3459, Nov. 2005.
doi:10.1109/TMTT.2005.859034 Google Scholar

35. Koh, K., H.-M. Park, and S. Hong, "A spline large-signal FET model based on bias-dependent pulsed I-V measurement," IEEE Trans. on Microwave Theory and Tech., Vol. 50, No. 11, 2598-2603, Nov. 2002.
doi:10.1109/TMTT.2002.804509 Google Scholar

36. Fernandez, T., Y. Newport, J. M. Zamanillo, A. Tazon, and A. Mediavilla, "Extracting a bias-dependent large signal MESFET model from pulsed I/V measurements," IEEE Trans. on Microwave Theory and Tech., Vol. 44, No. 3, 372-378, Mar. 1996.
doi:10.1109/22.486146 Google Scholar

37. Jeon, K.-I., Y.-S. Kwon, and S.-C. Hong, "A frequency dispersion model of GaAs MESFET for large-signal applications," IEEE Microwave Guided Wave Lett., Vol. 7, No. 3, 78-80, Mar. 1997.
doi:10.1109/75.556038 Google Scholar

38. Jarndal, A. and G. Kompa, "Large-signal model for AlGaN/GaN HEMTs accurately predicts trapping- and self-heating-induced dispersion and intermodulation distortion," IEEE Trans. on Electron Devices, Vol. 54, No. 11, 2830-2836, Nov. 2007.
doi:10.1109/TED.2007.907143 Google Scholar

39. Jardal, O., F. D. Groote, T. Reveyrand, J.-C. Jacquet, C. Charbonniaud, J.-P. Teyssier, D. Floriot, and R. Quere, "An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR," IEEE Trans. on Microwave Theory and Tech., Vol. 55, No. 12, 2660-2669, Dec. 2007.
doi:10.1109/TMTT.2007.907141 Google Scholar

40. Yuk, K. S. and G. R. Branner, "An empirical large-signal model for SiC MESFETs with sefl-heating thermal model," IEEE Trans. on Microwave Theory and Tech., Vol. 56, No. 11, 2671-2680, Nov. 2008.
doi:10.1109/TMTT.2008.2005922 Google Scholar

41. Chaibi, M., T. Fernamdez, J. Rodriguez-Tellez, J. L. Cano, and M. Aghoutane, "Accurate large-signal single current source thermal model for GaAs MESFET/HEMT," Electronics Lett., Vol. 43, No. 14, 775-777, Jul. 2007.
doi:10.1049/el:20071111 Google Scholar

42. Jastrzebski, A. K., "Characterisation and modelling of temperature and dispersion effects in power MESFETs," Proc. 24rd European Microwave Conf., 1319-1324, Cannes, France, Sep. 1994. Google Scholar

43. Fernandez, T., J. A. Garcia, A. Tazon, A. Mediavilla, J. C. Pedro, and J. L. Garcia, "Accurately modeling the drain to source current in recessed gate P-HEMT devices," IEEE Electron Device Lett., Vol. 20, No. 11, 557-559, Nov. 1999.
doi:10.1109/55.798042 Google Scholar

44. Cabral, P. M., J. C. Pedro, and N. B. Carvalho, "Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design," IEEE Trans. on Microwave Theory and Tech., Vol. 52, No. 11, 2585-2592, Nov. 2004.
doi:10.1109/TMTT.2004.837196 Google Scholar

45. Dambrine, G., A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. on Microwave Theory and Tech, Vol. 36, No. 7, 1151-1159, Jul. 1988.
doi:10.1109/22.3650 Google Scholar

46. Tayrani, R., J. E. Gerber, T. Daniel, R. S. Pengelly, and U. L. Rhode, "A new and reliable direct parasitic extraction method for MESFETs and HEMTs," Proc. 23rd European Microwave Conf., 451-453, Madrid, Spain, Sep. 1993.
doi:10.1109/EUMA.1993.336593 Google Scholar

Dr. Mohamed Chaibi

Dr. Tomas Fernandez Ibanez

Dr. Asmae Mimouni

Dr. José Rodriguez-Tellez

Prof. Antonio Tazón

Dr. Angel Mediavilla Sanchez