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2026-07-28 Fellow Article
Ionic-Ferroelectric Halide Perovskite Artificial Synapses with Dual-Mode Synaptic Plasticity (Invited Paper)
By
Progress In Electromagnetics Research, Vol. 185, 136-144, 2026
Abstract
Halide perovskites have demonstrated both short-term and long-term synaptic plasticity behaviors through various physical mechanisms, making them suitable neuromorphic electronics. However, most studies rely on distinct materials or device architectures optimized for one single mechanism, limiting the realization of both forms of synaptic plasticity within a unified material system. Here, we report ionic-ferroelectric halide perovskite (IFHP) artificial synapses that integrate two fundamentally different resistance switching processes within a single material. This functionality is enabled by the ferroelectric Dion-Jacobson perovskite (4-AMP)PbI4 (4-AMP = 4-(aminomethyl)piperidinium), which exhibits ion-migration-dominated behavior below the coercive voltage (VC ~ 3.5 V) and ferroelectric polarization switching above. Accordingly, the device exhibits volatile paired-pulse facilitation without stable non-volatile memory retention under sub-coercive stimulation, while exhibiting increasing non-volatile memory above VC. The ferroelectric-polarization-driven long-term plasticity is further supported by extended retention over 2 × 104 s, cycling operation, and device-to-device reproducibility. In addition, the IFHP artificial synapse emulates bio-inspired associative learning and nociceptive sensory functions, highlighting its potential as neuromorphic hardware. These results establish a single-material pathway for voltage-programmable mixed plasticity, addressing a key challenge in halide perovskite neuromorphic hardware.
Supplementary Information
Citation
Dae-Han Kang, Kwan-Nyeong Kim, Hea-Lim Park, Joo Sung Kim, Jung-Min Heo, Huanyu Zhou, Dong-Hyeok Kim, Gyeong-Tak Go, Ju Yong Park, Antonio Facchetti, Min Hyuk Park, In-Hyeok Park, and Tae-Woo Lee, "Ionic-Ferroelectric Halide Perovskite Artificial Synapses with Dual-Mode Synaptic Plasticity (Invited Paper)," Progress In Electromagnetics Research, Vol. 185, 136-144, 2026.
doi:10.2528/PIER26032405
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