volume | PIER Journals

2006-11-17

Analysis of V Transmission Lines Response to External Electromagnetic Fields

Ahmad Cheldavi,

Dr. Ahmad Cheldavi

Department of Electrical Engineering

Iran University of Science and Technology

Iran

Homepage

Payam Nayeri

Dr. Payam Nayeri

Department of Electrical Engineering

Iran University of Science and Technology

Iran

Homepage

Progress In Electromagnetics Research, Vol. 68, 297-315, 2007

doi:10.2528/PIER06093003 | Google Scholar

Abstract

In the present paper the response of V transmission line to electromagnetic illumination has been obtained. Also in order to determine the VTL frequency operation band for both TE and TM modes a Gaussian pulse source has been applied to the structure. The VTL structure has received considerable attention in high frequency and microwave IC packaging. The purpose of this study is to determine high frequency design considerations in order to reduce the effects of electromagnetic interference (EMI) on the VTL structure and maintain the desired performance. It was observed that the effect of incident EM waves on the V lines performance is considerably lower than conventional microstrips, however the V lines are more sensitive to sources at close proximity. In addition, although the V lines show lower dispersion at higher frequencies, their frequency operation band is limited by a resonance like behavior which is directly related to the V groove dimensions. The full wave analysis is carried out using the Yee-cell based 2 Dimensional Finite Difference Time Domain method (2D-FDTD), while enforcing a very stable and efficient mesh truncation technique.

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Ahmad Cheldavi, and Payam Nayeri, "Analysis of V Transmission Lines Response to External Electromagnetic Fields," Progress In Electromagnetics Research, Vol. 68, 297-315, 2007.
doi:10.2528/PIER06093003

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