We study the omnidirectional reflection (ODR) in onedimensional photonic crystal (PC) structures consisting of alternate layers of fullerene-gallium arsenide (GaAs), fullerene-germanium (Ge) and fullerene-telurium (Te). The proposed structures give 100% reflection within a very wide range of wavelength in the visible and in a very narrow portion of near IR region of the EM spectrum. Fullerene (C60) in the form thin film structure is a suitable candidate for the designing the PC structure because alkali-metal doped thin film of fullerene acts as conductor and have almost zero absorption in the wavelength range > 530nm and near IR region. Also, in this region its dielectric constant has very small dependence on the frequency and can be ignored. Thus being a metallic counter part as well as almost frequency independent dielectric constant and easier fabrication technique it is useful in designing the PC structure. The investigation has also been made for the study the role of ambient medium and effect of number of layers in the formation of ODR.
"Omnidirectional Reflection Bands in One-Dimensional Photonic Crystal Structure Using Fullerene Films," ,
Vol. 74, 181-194, 2007. doi:10.2528/PIER07050202
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