volume | PIER Journals

Abstract

This work presents a novel comparative modeling scheme for single-ended (SE) through-silicon vias (TSVs) in GSG and GS configurations. Physical scalable models based on the equations developed herein indicate that the use of two symmetric ground TSVs in GSG configuration relatively increases the parasitic capacitance and conductance in the silicon substrate. However, this increase in the parasitic capacitance requires that the parasitic inductance of SE TSV is reduced to maintain the same phase velocity in silicon. According to the modeling results, the GSG configuration has a larger insertion loss than that of the GS configuration because the former has a higher substrate conductance. Nevertheless, when measured using RF coaxial probes, the GSG configuration exhibits a larger measurement bandwidth than the GS configuration. Finally, with the assistance of a double-sided probing system, wideband S-parameter measurement can validate the established equivalent-circuit model of SE TSV in GSG configuration up to V-band frequencies.

1. Al-sarawi, S. F., D. Abbott, and P. D. Franzon, "A review of 3-D packaging technology," IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging , Vol. 21, No. 1, 2-1, Feb. 1998.
doi:10.1109/96.659500 Google Scholar

2. Kim, D. H., K. Athikulwongse, and S. K. Lim, "A study of through-silicon-via impact on the 3D stacked IC layout," Proc. IEEE Int. Conf. on Computer-Aided Design, 674-680, Nov. 2009. Google Scholar

3. Zhao, W.-S., X.-P. Wang, and W.-Y. Yin, "Electrothermal effects in high density through silicon via (TSV) arrays," Progress In Electromagnetics Research, Vol. 115, 223-242, 2011. Google Scholar

4. Liu, E.-X., E.-P. Li, W.-B. Ewe, H. M. Lee, T. G. Lim, and S. Gao, "Compact wideband equivalent-circuit model for electrical modeling of through-silicon via," IEEE Trans. Microw. Theory Tech., Vol. 59, No. 6, 1454-1460, Jun. 2011.
doi:10.1109/TMTT.2011.2116039 Google Scholar

5. Kim, J., J. S. Pak, J. Cho, E. Song, J. Cho, H. Kim, T. Song, J. Lee, H. Lee, K. Park, S. Yang, M.-S. Suh, K.-Y. Byun, and J. Kim, "High-frequency scalable electrical model and analysis of a through silicon via (TSV) ," IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 1, No. 2, 181-195, Feb. 2011.
doi:10.1109/TCPMT.2010.2101910 Google Scholar

6. Cheng, T.-Y., C.-D. Wang, Y.-P. Chiou, and T.-L, Wu, "A new model for through-silicon vias on 3-D IC using conformal mapping method," IEEE Microw. Wireless Compon. Lett., Vol. 22, No. 6, 303-305, Jun. 2012.
doi:10.1109/LMWC.2012.2195776 Google Scholar

7. Khalaj-Amirhosseini, M., "Closed form solutions for nonuniform transmission lines," Progress In Electromagnetics Research B, Vol. 2, 243-258, 2008.
doi:10.2528/PIERB07111502 Google Scholar

8. Lamy, Y. P. R., K. B. Jinesh, F. Roozeboom, D. J. Gravvesteijn, Lamy, Y. P. R., K. B. Jinesh, F. Roozeboom, and D. J. Gravvesteijn, "RF characterization and analytical modelling of through silicon vias and coplanar waveguides for 3D integration ," IEEE Trans. Adv. Packag., Vol. 33, No. 4, 1072-1079, Nov. 2010.
doi:10.1109/TADVP.2010.2046166 Google Scholar

9. Lim, T. G., Y. M. Khoo, C. S. Selvanayagam, D. S. W. Ho, R. Li, X. Zhang, G. Shan, and X. Y. Zhong, "Through silicon via interposer for millimetre wave applications," Proc. 61st Electron. Proc. 61st Electron., 577-582, 2011. Google Scholar

10. Kim, H., J. Cho, M. Kim, K. Kim, J. Lee, H. Lee, K. Park, K. Choi, H.-C. Bae, J. Kim, and J. Kim, "Measurement and analysis of a high-speed TSV channel," IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 2, No. 10, 1672-1685, Oct. 2012.
doi:10.1109/TCPMT.2012.2207900 Google Scholar

11. Jang, D. M., C. Ryu, K. Y. Lee, B. H. Cho, J. Kim, T. S. Oh, W. J. Lee, and J. Yu, "Development and evaluation of 3-D SiP with vertically interconnected through silicon vias (TSV)," Proc. 57th Electron. Comp. Tech. Conf., 847-852, 2007. Google Scholar

12. Fuchs, C., J. Charbonnier, S. Cheramy, L. Cadix, D. Henry, P. Chausse, O. Hajji, A. Farcy, G. Garnier, C. Brunet-Manquat, J. Diaz, and R. Anci, "Process and RF modelling of TSV last approach for 3D RF interposer," Proc. IEEE Int. Interconnect Tech. Conf. & Mat. for Adv. Metal., 1-3, 2011. Google Scholar

13. Fourneaud, L., T. Lacrevaz, J. Charbonnier, C. Fuchs, A. Farcy, C. Bermond, E. Eid, J. Roullard, and B. Flechet, "Extraction of equivalent high frequency models for TSV and RDL interconnects embedded in stacks of the 3D integration technology ," IEEE Workshop on Signal Propagation on Interconnects, 61-64, May 2011. Google Scholar

14. Lu, K.-C., T.-S. Horng, H.-H. Li, K.-C. Fan, T.-Y. Huang, and C.-H. Lin, "Scalable modeling and wideband measurement techniques for a signal TSV surrounded by multiple ground TSVs for RF/high-speed applications ," Proc. 62nd Electron. Comp. Tech. Conf., 1023-1026, 2012. Google Scholar

15. Lu, K.-C. and T.-S. Horng, "Comparative modeling study of single-ended through-silicon via between the G-S and G-S-G configuration ," IEEE Int. Microw. Symp. Dig., 2013. Google Scholar

16. Krupka, J., J. Breeze, A. Centeno, N. Alford, T. Clausen, and L. Jensen, "Measurements of permittivity, dielectric loss tangent, and resistivity of float-zone silicon at microwave frequencies," IEEE Trans. Microw. Theory Tech., Vol. 54, No. 11, 3995-4001, Nov. 2006.
doi:10.1109/TMTT.2006.883655 Google Scholar

17. Wartenberg, S. A., "Selected topics in RF coplanar probing," IEEE Trans. Microw. Theory Tech., Vol. 51, No. 4, 1413-1421, Apr. 2003.
doi:10.1109/TMTT.2003.809184 Google Scholar

18. Lu, K.-C., Y.-C. Lin, T.-S. Horng, S.-M. Wu, C.-C. Wang, C.-T. Chiu, and C.-P. Hung, "Vertical interconnect measurement techniques based on double-sided probing system and short-open-load-reciprocal calibration," roc. 61th Electron. Comp. Tech. Conf., 2130-2133, 2011. Google Scholar

19. Fenero, A. and U. Pisani, "Two-port network analyzer calibration using an unknown `thru'," IEEE Microw. Guided Wave Lett., Vol. 2, No. 12, 505-507, Dec. 1992.
doi:10.1109/75.173410 Google Scholar

20. Basu, L. Hayden and L. Hayden, "An SOLR calibration for accurate measurement of orthogonal on-wafer DUTs," IEEE Int. Microw. Symp. Dig., 1335-1338, 1997. Google Scholar

21. Wartenberg, S. A., "Selected topics in RF coplanar probing," IEEE Trans. Microw. Theory Tech., Vol. 591, No. 4, 1413-1421, Apr. 2003.
doi:10.1109/TMTT.2003.809184 Google Scholar

Dr. Kuan-Chung Lu

Dr. Tzyy-Sheng Horng